Method for forming semiconductor device

A method, comprising:

• receiving a workpiece comprising:
• a first stack of nanostructures and a second stack of nanostructures,
• a dielectric fin disposed between the first stack of nanostructures and the second stack of nanostructures;
• depositing a protection layer over the first stack of nanostructures, the dielectric fin, and the second stack of nanostructures;
• depositing a cap layer over the protection layer;
• selectively removing the cap layer over the first stack of nanostructures while the second stack of nanostructures remain covered by the cap layer;
• forming a first metal layer over the first stack of nanostructures, the dielectric fin and the cap layer over the second stack of nanostructures;
• selectively removing the first metal layer and the cap layer over the second stack of nanostructures;
• and
• forming a second metal layer over the second stack of nanostructures and the first metal layer over the first stack of nano structures.

A method, comprising:

• receiving a workpiece comprising:
• a first active region and a second active region, and
• a dielectric fin disposed between the first active region and the second active region;
• forming a gate dielectric layer over the first active region, the dielectric fin and the second active region;
• after the forming of the gate dielectric layer, depositing a cap layer over the dielectric fin, the first active region and the second active region;
• etching back the cap layer until the dielectric fin separates the cap layer into a first portion over the first active region and a second portion over the second active region;
• after the etching back, selectively removing the first portion of the cap layer over the first active region;
• forming a first metal layer over the first active region, the dielectric fin and the cap layer over the second active region;
• selectively removing the first metal layer and the cap layer over the second active region;
• and
• forming a second metal layer over the second active region and the first metal layer over the first active region.