Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an active fin to protrude from a substrate and extend in a first direction;
• forming a plurality of sacrificial gate patterns to intersect the active fin and extend in a second direction, the second direction perpendicular to the first direction;
• forming recess regions by etching the active fin on at least one side of each of the plurality of sacrificial gate patterns;
• forming source/drain regions on the recess regions of the active fin;
• removing the plurality of sacrificial gate patterns to form a plurality of openings;
• and
• forming a gate dielectric layer and a gate electrode to form a plurality of gate structures that cover the active fin in the plurality of openings,
• wherein the source/drain regions are formed by performing an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements, and
• in at least one of the source/drain regions, after the in-situ doping process is performed, counter-doping is performed using second conductivity-type impurity elements to decrease a carrier concentration of the at least one of the source/drain regions, the second conductivity-type impurity elements are different from the first conductivity-type impurity elements.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first active fin on a low-voltage region of a substrate, and a second active fin on a high-voltage region of the substrate;
• forming a first sacrificial gate pattern to intersect the first active fin, and a second sacrificial gate pattern to intersect the second active fin;
• forming first recess regions by etching the first active fin on opposite sides of the first sacrificial gate pattern, and second recess regions by etching the second active fin on opposite sides of the second sacrificial gate pattern;
• forming first source/drain regions on the first recess regions and second source/drain regions on the second recess regions by performing an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements;
• and
• implanting second conductivity-type impurity elements into the second source/drain regions on the high-voltage region such that a concentration of carriers in the second source/drain regions is decreased to be less than a concentration of carriers in the first source/drain regions, the second conductivity-type impurity elements are different from the first conductivity-type impurity elements.