FinFET device and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Wei Lee, Che-Yu Lin, Hsueh-Chang Sung, Yee-Chia Yeo
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Wei Lee, Che-Yu Lin, Hsueh-Chang Sung, Yee-Chia Yeo
Estimating the term…
A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source/drain region in the first recess.
A system for performing a plasma cleaning process, comprising:
A system, comprising:
A plasma etching system, comprising:
Dependencies are inferred from the claim text.