Manufacturing method of semiconductor structure and semiconductor structure

A manufacturing method of a semiconductor structure, comprising:

• providing a substrate, and depositing a thin-film stacked structure on the substrate;
• forming a first hole in the thin-film stacked structure, the first hole extending through the thin-film stacked structure along a stacking direction of the thin-film stacked structure, and a bottom of the first hole exposing the substrate;
• growing an epitaxial silicon pillar in the first hole;
• etching the thin-film stacked structure and the epitaxial silicon pillar along a first direction to form a first trench, the first trench passing through a center of the epitaxial silicon pillar and dividing the epitaxial silicon pillar into a first half pillar and a second half pillar;
• forming a first isolation layer, the first isolation layer filling the first trench;
• forming a first channel region of a first doping type in a sidewall of the first half pillar away from the first trench, and forming a second channel region of a second doping type in a sidewall of the second half pillar away from the first trench, one of the first doping type and the second doping type being an N type, and the other one being a P type;
• and
• forming a gate dielectric layer and a gate conductive layer on a surface of each of the first channel region and the second channel region.