Semiconductor device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Hung Tai, Jian-Hao Chen, Hui-Chi Chen, Kuo-Feng Yu
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a cap layer over the gate stack. The semiconductor device structure includes a protective layer over the cap layer, wherein a lower portion of the protective layer extends into the cap layer. The semiconductor device structure includes a contact structure passing through the protective layer and the cap layer.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer over a substrate, wherein the dielectric layer has a trench;
- forming a gate stack in the trench, wherein a first top surface of the gate stack is lower than a second top surface of the dielectric layer;
- forming a cap layer over the gate stack and in the trench;
- forming a protective layer over the cap layer, wherein a lower portion of the protective layer is embedded in the cap layer;
- forming a first through hole in the protective layer;
- forming a second through hole in the cap layer and under the first through hole;
- and
- forming a contact structure in the first through hole and the second through hole.
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer over a substrate, wherein the dielectric layer has a trench;
- forming a gate stack in the trench, wherein a first top surface of the gate stack is lower than a second top surface of the dielectric layer;
- forming a cap layer over the gate stack and in the trench, wherein a concentration of a dopant in the cap layer increases in a direction away from the gate stack;
- forming a protective layer over the cap layer;
- and
- forming a contact structure passing through the protective layer and the cap layer.
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer over a substrate, wherein the dielectric layer has a trench;
- forming a gate stack in the trench, wherein a first top surface of the gate stack is lower than a second top surface of the dielectric layer;
- forming a conductive layer over the gate stack and in the trench;
- forming a cap layer over the conductive layer and in the trench;
- forming a protective layer over the cap layer and in the trench, wherein the conductive layer, the cap layer, and the protective layer are made of different materials, and a first sidewall of the cap layer is connected between a second sidewall of the protective layer and a third sidewall of the conductive layer;
- and
- forming a contact structure passing through the protective layer and the cap layer.
Dependencies are inferred from the claim text.