Semiconductor device

A device comprising:

• a semiconductive layer over a substrate;
• a gate structure surrounding the semiconductive layer;
• a source/drain epitaxial structure interfacing with the semiconductive layer;
• an epitaxial layer over the source/drain epitaxial structure;
• a contact over the epitaxial layer;
• metal oxide structures vertically between the source/drain epitaxial structure and the contact;
• and
• a metal alloy layer over epitaxial layer and laterally between the metal oxide structures.

A device comprising:

• a semiconductive layer over a substrate;
• a gate structure surrounding the semiconductive layer;
• a source/drain epitaxial structure adjacent the semiconductive layer;
• an epitaxial layer over the source/drain epitaxial structure;
• a metal oxide structure over the epitaxial layer;
• and
• a contact over the epitaxial layer and the metal oxide structure, wherein a bottom surface of the contact is lower than a top surface the metal oxide structure and higher than a bottom surface of the metal oxide structure.