Device architectures with tensile and compressive strained substrates

A semiconductor structure, comprising:

• a base substrate;
• an insulating layer on the base substrate, the insulating layer having a thickness between about 5 nm and about 100 nm;
• and
• an active layer comprising at least two pluralities of different volumes of semiconductor material comprising silicon, germanium, silicon germanium or any combination thereof, the active layer disposed over the insulating layer, the at least two pluralities of different volumes of semiconductor material comprising:
• a first plurality of volumes of semiconductor material having a tensile strain of at least 0.6%;
• and
• a second plurality of volumes of semiconductor material having a compressive strain of at least −0.6%, the second plurality of volumes of semiconductor material comprising a compressive strained silicon germanium material positioned on recrystallized silicon obtained from crystallization of ion-implanted amorphous silicon.