Semiconductor device and method of manufacture

A method comprising:

• forming a dummy gate on a first channel region of a first channel layer and a second channel region of a second channel layer, the first channel layer and the second channel layer disposed above a semiconductor substrate;
• forming a first spacer on a sidewall of the dummy gate;
• performing a first implantation process to implant dopants in the first channel layer to form first doped portions on first ends of the first channel region;
• performing a second implantation process to implant dopants in the second channel layer to form second doped portions on second ends of the second channel region, wherein during the first implantation process and the second implantation process the dummy gate and the first spacers are used as an implant mask, wherein each of the first doped portions and the second doped portions have a gradient-doped profile;
• and
• after performing the first implantation process and the second implantation process, forming a second spacer on a sidewall of the first spacer.

A method comprising:

• forming a dummy gate on a multi-layer stack, the multi-layer stack comprising a plurality of sacrificial layers that alternate with a plurality of channel layers;
• forming a first spacer on a sidewall of the dummy gate;
• performing a first implantation process to form first doped portions on first ends of a first channel region of a first channel layer of the plurality of channel layers;
• performing a second implantation process to form second doped portions on second ends of a second channel region of a second channel layer of the plurality of channel layers;
• forming a first recess in the multi-layer stack adjacent the dummy gate;
• forming a semiconductor material in a bottom portion of the first recess;
• performing a third implantation process to introduce dopants into the semiconductor material;
• and
• forming an epitaxial source/drain region over the semiconductor material in the first recess.