Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorHae Jung Park
Life of this patent
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Abstract
A semiconductor device including: a semiconductor substrate including an active region; a plurality of conductive structures formed over the semiconductor substrate; an isolation layer filling a space between the conductive structures and having an opening that exposes the active region between the conductive structures; a pad formed in a bottom portion of the opening and in contact with the active region; a plug liner formed conformally over a sidewall of the opening and exposing the pad; and a contact plug formed over the pad inside the opening.
Claims11
A method for fabricating a semiconductor device, comprising:
- providing a substrate including a plurality of active regions;
- forming a plurality of bit line structures in which bit line contact plugs, bit lines, and bit line hard masks are stacked over the substrate;
- forming an isolation layer filling a space between the bit line structures and having an opening exposing the active regions between the bit line structures;
- forming a pad in a bottom portion of the opening;
- forming plug liner over a sidewall of the opening and exposing the pad;
- and
- forming a contact plug filling the opening over the pad,
- wherein the upper surface of the pad is positioned at a lower level than the upper surface of the each bit line contact plug,
- wherein the plug liner includes polysilicon.
A method for fabricating a semiconductor device, comprising:
- providing a substrate including a plurality of active regions;
- forming a plurality of bit line structures over an upper portion of the substrate;
- forming an isolation layer having an opening that exposes the active regions between the bit line structures while filling the space between the bit line structures;
- forming a pad in a bottom portion of the opening;
- forming a first spacer over a sidewall of the opening and exposing the pad;
- forming a plug liner covering in lower portion of the first spacer;
- forming a first contact plug filling a portion of the opening over the pad;
- forming a second spacer over the plug liner and covering an upper portion of the first spacer;
- and
- forming a second contact plug filling a remaining portion of the opening over the first contact plug,
- wherein the plug line includes polysilicon.
Dependencies are inferred from the claim text.