Integrated circuit device and method of forming the same

An integrated circuit (IC) device, comprising:

• a first region and a second region adjacent to each other along a first direction on a substrate;
• fin patterns in each of the first region and the second region, the fin patterns extending along a second direction perpendicular to the first direction;
• gate electrodes extending along the first direction and intersecting the fin patterns;
• and
• an isolation region extending continuously in the second direction between two or more gate electrodes and between the first region and the second region, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate along the second direction.

An integrated circuit (IC) device, comprising:

• a first region and a second region adjacent to each other along a first direction on a substrate;
• fin patterns in each of the first region and the second region, the fin patterns extending along a second direction perpendicular to the first direction;
• gate electrodes extending along the first direction and intersecting the fin patterns;
• and
• an isolation region extending continuously in the second direction between two or more gate electrodes and between the first region and the second region, an entirety of a width of the isolation region along the first direction being between two of the fin patterns that are directly adjacent to each other along the first direction,
• wherein a bottom of the isolation region extending in the second direction has a non-uniform height relative to a bottom of the substrate along the second direction.