Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Fu Lin, Tsung-Hao Yeh, Chih-Wei Hung
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Abstract
A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming a trench in a semiconductor layer;
- forming a dielectric film in the trench;
- forming an anti-type doping layer beneath the dielectric film;
- forming a drift region in the semiconductor layer in a way that the anti-type doping layer is located between the drift region and the dielectric film, the drift region having a first conductivity type opposite to a second conductivity type of the anti-type doping layer;
- and
- forming a drain area within a portion of the drift region, the drain area having the first type conductivity and having a doping concentration higher than a doping concentration of the drift region,
- the anti-type doping layer being disposed to entirely separate the drift region and the drain area from the dielectric film.
A method for manufacturing a semiconductor device comprising:
- forming a trench in a semiconductor layer;
- forming a dielectric film in the trench;
- forming an anti-type doping layer beneath the dielectric film;
- forming a drift region in the semiconductor layer in a way that the anti-type doping layer is located between the drift region and the dielectric film, the drift region having a first conductivity type opposite to a second conductivity type of the anti-type doping layer;
- forming a drain area within a portion of the drift region, the drain area having the first type conductivity and having a doping concentration higher than a doping concentration of the drift region;
- and
- forming a source area in the semiconductor layer in a way that the dielectric film is located between the source area and the drain area, the source area having the first conductivity type,
- the anti-type doping layer being disposed to entirely separate the drift region and the drain area from the dielectric film.
A method for manufacturing a semiconductor device comprising:
- forming a trench in a semiconductor layer;
- forming a dielectric film in the trench;
- forming an anti-type doping layer beneath the dielectric film;
- forming a drift region in the semiconductor layer in a way that the anti-type doping layer is located between the drift region and the dielectric film, the drift region having a first conductivity type opposite to a second conductivity type of the anti-type doping layer;
- forming a drain area within a portion of the drift region, the drain area having the first type conductivity and having a doping concentration higher than a doping concentration of the drift region;
- forming a source area in the semiconductor layer in a way that the dielectric film is located between the source area and the drain area, the source area having the first conductivity type;
- and
- forming a well region in the semiconductor layer in a way that the well region is located to separate the source area from the drift region, the well region having the second type conductivity,
- the anti-type doping layer being disposed to entirely separate the drift region and the drain area from the dielectric film.
Dependencies are inferred from the claim text.