Deep trench intersections

A method, comprising:

• forming a deep trench in a semiconductor substrate having a top surface, the deep trench extending into the semiconductor substrate from the top surface;
• and
• filling the deep trench with a trench filler material to form a deep trench structure, the deep trench structure including:
• a first linear trench having a first width;
• a second linear trench having a second width;
• a third linear trench having a third width;
• a fourth linear trench having a fourth width:
• a first connector trench connecting the first linear trench to the second linear trench;
• a second connector trench connecting the second linear trench to the third linear trench;
• a third connector trench connecting the third linear trench to the fourth linear trench;
• and
• a fourth connector trench connecting the fourth linear trench to the first linear trench, wherein:
• the first, second, third connector trenches laterally surround a substrate pillar that includes a material of the semiconductor substrate, the first connector trench follows a first arced path with a first inner radius that is 1.4 to 2.0 times a minimum of the first and second widths;
• the second connector trench follows a second arced path with a second inner radius that is 1.4 to 2.0 times a minimum of the second and third widths;
• the third connector trench follows a third arced path with a third inner radius that is 1.4 to 2.0 times a minimum of the third and fourth widths;
• and
• the fourth connector trench follows a fourth arced path with a fourth inner radius that is 1.4 to 2.0 times a minimum of the fourth and first widths, such that the substrate pillar has an area equal to 30 percent to 120 percent of a square with a side equal to a minimum of the first, second, third, and fourth widths.

A semiconductor device, comprising:

• a deep trench structure in a semiconductor substrate, the deep trench structure including:
• a first linear trench having a first width;
• a second linear trench having a second width;
• a third linear trench having a third width;
• a fourth linear trench having a fourth width:
• a trench intersection, wherein the first, second, third and fourth linear trenches extend into the trench intersection, the trench intersection including:
• a first connector trench connecting the first linear trench to the second linear trench, wherein the distance across the first connector trench to a substrate pillar has a fifth width, wherein the fifth width is greater than the lesser of the first width and the second width;
• a second connector trench connecting the second linear trench to the third linear trench, wherein the distance across the second connector trench to the substrate pillar has a sixth width, wherein the sixth width is greater than the lesser of the second width and the third width;
• a third connector trench connecting the third linear trench to the fourth linear trench, wherein the distance across the first connector trench to the substrate pillar has a seventh width, wherein the seventh width is greater than the lesser of the third width and the fourth width;
• and
• a fourth connector trench connecting the fourth linear trench to the first linear trench, wherein the distance across the first connector trench to the substrate pillar has an eighth width, wherein the eighth width is greater than the lesser of the fourth width and the first width;
• and
• the substrate pillar including a material of the semiconductor substrate, wherein:
• the substrate pillar is laterally surrounded by the trench intersection;
• the first connector trench follows a first arced path with a first inner radius that is 1.4 to 2.0 times a minimum of the first and second widths;
• the second connector trench follows a second arced path with a second inner radius that is 1.4 to 2.0 times a minimum of the second and third widths;
• the third connector trench follows a third arced path with a third inner radius that is 1.4 to 2.0 times a minimum of the third and fourth widths;
• and
• the fourth connector trench follows a fourth arced path with a fourth inner radius that is 1.4 to 2.0 times a minimum of the fourth and first widths, such that the substrate pillar has an area equal to 30 percent to 120 percent of a square with a side equal to a minimum of the first, second, third, and fourth widths.