SiC semiconductor device

An SiC semiconductor device comprising:

• an SiC semiconductor layer including an SiC epitaxial layer formed on an SiC substrate, the SiC epitaxial layer having a device forming surface facing a c-plane of an SiC monocrystal and having an off angle inclined to an off direction with respect to the c-plane, and a side surface in an orthogonal direction to the off direction, the side surface having an angle less than the off angle inclined with respect to a normal to the device forming surface, and
• a plurality of modified layers formed at intervals in a thickness direction of the SiC semiconductor substrate to expose the SiC epitaxial layer at the side surface and modified to be of a property differing from the SiC semiconductor substrate.