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US 12,218,184 B2Granted
Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Lin Chu, Szu-Yu Wang, Ching I Li
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Abstract
A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.
Claims20
A semiconductor structure, comprising:
- a capacitor structure, comprising:
- a first electrode layer;
- a second electrode layer over the first electrode layer;
- a protective dielectric layer covering and contacting a top surface of the first electrode layer;
- a capacitor dielectric layer on the protective dielectric layer;
- and
- a protective dielectric sidewall covering a lateral surface of the second electrode layer, wherein the first electrode layer, the second electrode layer, the protective dielectric sidewall, and the protective dielectric layer comprise a same metal element;
- a contact structure penetrating the protective dielectric layer and electrically connecting to the second electrode layer.
5 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a first conductive layer on the semiconductor substrate;
- a second conductive layer below the first conductive layer;
- a first dielectric layer over the first conductive layer;
- a second dielectric layer between the second conductive layer and the first conductive layer;
- a first buffer oxide sidewall over the second dielectric layer and covering a lateral surface of the first conductive layer;
- and
- a first buffer oxide layer covering and contacting a top surface of the second conductive layer, wherein the second conductive layer, the first conductive layer, the first buffer oxide sidewall, and the first buffer oxide layer comprise a same metal element.
5 more elements
A semiconductor structure, comprising:
- a capacitor structure, comprising:
- a first electrode layer;
- a second electrode layer over the first electrode layer;
- a first dielectric layer between the first electrode layer and the second electrode layer;
- and
- a first buffer oxide sidewall over the first dielectric layer and covering a lateral surface of the second electrode layer;
- and
- a first contact structure penetrating the first dielectric layer and electrically connected to the first electrode layer,
- wherein the capacitor structure further comprises a first buffer oxide layer covering and contacting a top surface of the first electrode layer, and
- wherein the first electrode layer, the second electrode layer, the first buffer oxide sidewall, and the first buffer oxide layer comprise a same metal element.
7 more elements
Dependencies are inferred from the claim text.