Method for manufacturing semiconductor structure and semiconductor structure

A method for manufacturing a semiconductor structure, comprising:

• forming a plurality of capacitor holes on a substrate, and exposing a part of the substrate on bottoms of the capacitor holes;
• forming a bottom electrode layer on surfaces of the capacitor holes;
• forming a dielectric layer continuously covering a surface of the bottom electrode layer;
• forming a first top electrode layer to continuously cover a surface of the dielectric layer by a first film forming process, a material of the first top electrode layer comprises TiN;
• and
• by a second film forming process, forming, in a circumferential direction of the capacitor holes, a second top electrode layer continuously covering a surface of the first top electrode layer, and forming, in an axial direction of the capacitor holes, a second top electrode layer discontinuously covering the surface of the first top electrode layer,
• wherein a material of the second top electrode layer comprises TIN, wherein the first film forming process comprises a first deposition rate, the second film forming process comprises a second deposition rate, and the first deposition rate is less than the second deposition rate.