Image sensor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Yu Wei, Yen-Liang Lin, Kuo-Cheng Lee, Hsun-Ying Huang, Hsin-Chi Chen
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Abstract
An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.
Claims20
An image sensor device comprising:
- a semiconductor substrate;
- a radiation sensing member in the semiconductor substrate, wherein an interface between the radiation sensing member and the semiconductor substrate comprises a direct band gap material;
- a shallow trench isolation in the semiconductor substrate and surrounding the radiation sensing member;
- and
- a color filter layer covering the radiation sensing member.
An image sensor device comprising:
- a semiconductor substrate;
- a radiation sensing member in the semiconductor substrate;
- a pinned element in the radiation sensing member, wherein an interface between the pinned element and the semiconductor substrate comprises a direct band gap material;
- and
- a microlens layer covering the radiation sensing member.
An image sensor device comprising:
- a semiconductor substrate;
- a radiation sensing member in the semiconductor substrate and comprising a first direct band gap material on a sidewall of the radiation sensing member;
- a deep trench isolation in the semiconductor substrate and surrounding the radiation sensing member;
- and
- a metal grid over the deep trench isolation.
Dependencies are inferred from the claim text.