Solid-state imaging device and electronic device

An electronic device, comprising:

• a solid-state imaging device that includes:
• a first semiconductor element that includes:
• a first semiconductor layer that includes:
• a first through via;
• and
• a photoelectric conversion unit in a region of the first semiconductor layer, wherein the photoelectric conversion unit is configured to photoelectrically convert light incident on a light incident surface side of the first semiconductor layer;
• a connection part that is wider than the first through via, wherein
• the connection part is outside the region of the first semiconductor layer that includes the photoelectric conversion unit,
• the connection part includes a first metal layer and a second metal layer different from the first metal layer, and
• the second metal layer is on the first metal layer;
• a connection wiring on the first semiconductor layer, wherein the connection wiring connects the first through via and the connection part;
• and
• a first passivation layer on the light incident surface side, wherein the first metal layer and the second metal layer are between the first passivation layer and the first semiconductor layer;
• a second semiconductor element on the first semiconductor element, wherein the connection part is between the first semiconductor element and the second semiconductor element;
• a second semiconductor layer;
• a second passivation layer;
• a first guard ring on an outer peripheral portion of the first semiconductor element, wherein
• the first guard ring surrounds the first semiconductor element,
• the first guard ring is outside the first semiconductor layer and above the second semiconductor layer, and
• the first guard ring is outside the first passivation layer and below the second passivation layer;
• and
• a plurality of third guard rings below the second semiconductor layer, wherein
• at least a first of the plurality of third guard rings is connected in series to the first guard ring, and
• at least a second of the plurality of third guard rings is connected to the second semiconductor layer.