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US 12,218,165 B2Granted
Semiconductor image sensor and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Hsing-Chih Lin, Che-Wei Chen
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Abstract
An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.
Claims20
An image sensor, comprising:
- a substrate comprising a first surface and a second surface opposite to the first surface;
- a plurality of pixel sensors disposed in the substrate;
- a sensor isolation feature disposed in the substrate defining an active region;
- a dielectric layer between the sensor isolation feature and the substrate;
- a periphery connecting feature disposed in the substrate at a periphery region outside the active region;
- and
- a conductive grid disposed on the second surface and over the sensor isolation feature,
- wherein the sensor isolation feature comprises a conductive material,
- wherein the dielectric layer is disposed in a bottom of the sensor isolation feature and is inserted into an isolation region disposed in the substrate, and
- wherein a portion of the isolation region is present between the dielectric layer disposed in the bottom of the sensor isolation feature and the first surface of the substrate,
- wherein the conductive grid connects the sensor isolation feature to the periphery connecting feature, and
- wherein the periphery connecting feature penetrates through the first surface of the substrate, an etch stop layer formed on the first surface of the substrate, and an inter-layer dielectric layer formed on the etch stop layer.
9 more elements
An image sensor, comprising:
- a substrate comprising a first surface and a second surface opposite to the first surface;
- a sensor isolation feature disposed within the substrate extending from the second surface toward the first surface;
- a periphery connecting feature disposed within the substrate extending from the second surface of the substrate;
- a dielectric layer disposed over sidewalls and a bottom of the sensor isolation feature and sidewall of the periphery connecting feature;
- and
- a conductive grid disposed on the second surface and over the sensor isolation feature,
- wherein the dielectric layer is disposed in the bottom of the sensor isolation feature and is inserted into an isolation region disposed in the substrate,
- wherein a portion of the isolation region is present between the dielectric layer disposed in the bottom of the sensor isolation feature and the first surface of the substrate,
- wherein the conductive grid connects the sensor isolation feature to the periphery connecting feature, and
- wherein the periphery connecting feature penetrates through the first surface of the substrate, an etch stop layer formed on the first surface of the substrate, and an inter-layer dielectric layer formed on the etch stop layer.
7 more elements
An image sensor, comprising:
- a substrate comprising a first surface and a second surface opposite to the first surface;
- a sensor isolation feature disposed within the substrate extending from the second surface toward the first surface, wherein the sensor isolation feature has a first depth;
- a periphery connecting feature disposed within the substrate extending from the second surface of the substrate, wherein the periphery connecting feature has a second depth;
- a dielectric layer disposed over sidewalls and a bottom of the sensor isolation feature and sidewall of the periphery connecting feature;
- and
- a conductive grid disposed on the second surface and over the sensor isolation feature,
- wherein the first depth is smaller than the second depth,
- wherein the dielectric layer is disposed in the bottom of the sensor isolation feature and is inserted into an isolation region disposed in the substrate,
- wherein a portion of the isolation region is present between the dielectric layer disposed in the bottom of the sensor isolation feature and the first surface of the substrate,
- wherein the conductive grid connects the sensor isolation feature to the periphery connecting feature, and
- wherein the periphery connecting feature penetrates through the first surface of the substrate, an etch stop layer formed on the first surface of the substrate, and an inter-layer dielectric layer formed on the etch stop layer.
8 more elements
Dependencies are inferred from the claim text.