Semiconductor image-sensing structure and method for forming the same

A semiconductor image-sensing structure, comprising:

• a substrate having a first region and a second region;
• a metal grid in the first region;
• and
• a hybrid metal shield in the second region, wherein the hybrid metal shield comprises:
• a first metal stack;
• and
• a second metal stack disposed over the first metal stack,
• wherein a thickness of the metal grid is equal to or less than a thickness of the first metal stack.

A method for forming a semiconductor image-sensing structure, comprising:

• receiving a substrate having a first region and a second region defined thereon;
• forming a first metal stack over the substrate in the second region, wherein the first metal stack has an included angle between approximately 40° and approximately 60°;
• and
• simultaneously forming a metal grid in the first region and a second metal stack in the second region, wherein the first metal stack and the second metal stack form a hybrid metal shield.