Image acquisition device

A method for producing an image acquisition device, comprising:

• forming an array of visible light color filters;
• depositing at least one layer made from an inorganic dielectric material by plasma-enhanced chemical vapor deposition on the array of visible light color filters;
• and
• forming an array of microlenses on the at least one layer made from an inorganic dielectric material and extending over the array of visible light color filters;
• wherein depositing comprises using a silicon oxynitride for the inorganic dielectric material.

A method of producing an image acquisition device, comprising:

• forming a first region with digital circuits and a second region with photodetection circuits in a semiconductor substrate, said semiconductor substrate including a back surface;
• depositing an opaque conductive layer on the back surface at the first region;
• forming a matrix of visible light color filters on the back surface at the second region;
• covering the opaque conductive layer at the first region with an organic material layer;
• covering the matrix of color filters at the second region and the organic material layer at the first region with at least one layer made from an inorganic dielectric material deposited by plasma-enhanced chemical vapor deposition;
• covering the at least one layer made from the inorganic dielectric material at both the first and second regions with a transparent material layer;
• and
• shaping said transparent material layer shaped to form microlenses at the second region positioned over the matrix of visible light color filters.