Display device having power line electrically connected to electrode layers located above and below transistor

A display device comprising:

• a substrate;
• a driving transistor disposed on the substrate, the driving transistor comprising a semiconductor layer and a gate electrode;
• a power line disposed on the driving transistor and electrically connected to the driving transistor;
• a bottom metal layer arranged between the substrate and the semiconductor layer;
• and
• an electrode layer overlapping the gate electrode of the driving transistor and electrically connected to the power line;
• and
• a light-emitting device comprising a pixel electrode, a common electrode facing the pixel electrode, and an emission layer between the pixel electrode and the common electrode,
• wherein the semiconductor layer overlaps the bottom metal layer,
• wherein the power line and the bottom metal layer are configured to receive a same voltage,
• wherein a first end of the semiconductor layer is electrically connected to the power line and a second end of the semiconductor layer is electrically connected to the pixel electrode,
• wherein the semiconductor layer comprises a source area, a drain area, and a channel area between the source area and the drain area,
• wherein each of the bottom metal layer, the gate electrode of the driving transistor, the electrode layer, and the power line overlaps the channel area of the semiconductor layer, and
• wherein the channel area of the semiconductor layer is located between a connected part of the power line and the first end of the semiconductor layer and a connected part of the second end of the semiconductor layer and the pixel electrode.

A display device comprising:

• a substrate;
• a bottom metal layer on the substrate;
• a first transistor overlapping the bottom metal layer and comprising a first semiconductor layer and a first gate electrode;
• an electrode layer overlapping the first gate electrode of the first transistor;
• a power line disposed on the first transistor and electrically connected to the electrode layer;
• a second transistor comprising a second semiconductor layer and a second gate electrode;
• a connection electrode electrically connecting the first gate electrode of the first transistor and a first end of the second semiconductor layer;
• and
• a light-emitting device comprising a pixel electrode, a common electrode facing the pixel electrode, and an emission layer between the pixel electrode and the common electrode,
• wherein a first end of the first semiconductor layer is electrically connected to the power line and a second end of the first semiconductor layer is electrically connected to the pixel electrode, and
• wherein a second end of the second semiconductor layer is electrically connected to the second end of the first semiconductor layer.