Display panel and display device

A display panel, comprising:

• a base substrate;
• a first transistor and a second transistor;
• wherein:
• the first transistor and the second transistor are formed on the base substrate;
• the first transistor includes a first active layer, a first gate electrode, a first source electrode, and a first drain electrode;
• the first active layer includes silicon;
• the second transistor includes a second active layer, a second gate electrode, a second source electrode, and a second drain electrode;
• and the second active layer includes an oxide semiconductor;
• a length of a channel region of the first transistor is L1;
• along a direction perpendicular to the base substrate, a distance between the first gate electrode and the first active layer is D1;
• and a first area S1=L1×D1;
• and
• a length of a channel region of the second transistor is L2;
• along the direction perpendicular to the base substrate, a distance between the second gate electrode and the second active layer is D2;
• and a second area S2=L2×D2, wherein S1<S2;
• and
• a pixel circuit and a drive circuit providing a drive signal for the pixel circuit, wherein the second transistor is included in the drive circuit, and the first transistor is included in the pixel circuit, the first transistor is a drive transistor of the pixel circuit, and the second transistor is a switch transistor of the pixel circuit.

A display device, comprising a display panel, the display panel comprising:

• a base substrate;
• a first transistor and a second transistor;
• wherein:
• the first transistor and the second transistor are formed on the base substrate;
• the first transistor includes a first active layer, a first gate electrode, a first source electrode, and a first drain electrode;
• the first active layer includes silicon;
• the second transistor includes a second active layer, a second gate electrode, a second source electrode, and a second drain electrode;
• and the second active layer includes an oxide semiconductor;
• a length of a channel region of the first transistor is L1;
• along a direction perpendicular to the base substrate, a distance between the first gate electrode and the first active layer is D1;
• and a first area S1=L1×D1;
• and
• a length of a channel region of the second transistor is L2;
• along the direction perpendicular to the base substrate, a distance between the second gate electrode and the second active layer is D2;
• and a second area S2=L2×D2, wherein S1<S2;
• and
• a pixel circuit and a drive circuit providing a drive signal for the pixel circuit, wherein the second transistor is included in the pixel circuit, and the first transistor is included in the pixel circuit, the first transistor is a drive transistor of the pixel circuit, and the second transistor is a switch transistor of the pixel circuit.