Semiconductor device with metal structure

A semiconductor device comprising:

• a substrate having a first region and a second region, the first active region being associated with a first transistor and the second active region being associated with a second transistor;
• a first active region disposed in the first region of the substrate;
• a second active region disposed in the second region of the substrate;
• a first gate stack disposed over the first active region and a second gate stack disposed over the second active region, wherein the first gate stack and the second gate stack have elongated shapes oriented in a first direction;
• a first metal layer disposed over the first gate stack and the second gate stack, wherein the first metal layer comprises a plurality of first metal layer structures oriented in a second direction, the second direction being orthogonal to the first direction;
• a second metal layer disposed over the first metal layer, wherein the second metal layer comprises a plurality of second metal layer structures oriented in the first direction;
• and
• a third metal layer disposed over the second metal layer, wherein the third metal layer comprises a plurality of third metal layer structures oriented in the second direction, wherein:
• the plurality of first metal layer structures have a first minimum pitch P1,
• the plurality of second metal layer structures have a second minimum pitch P2,
• the plurality of third metal layer structures have a third minimum pitch P3, and
• the second minimum pitch P2 is greater than both the first minimum pitch P1 and the third minimum pitch P3;
• a drain contact directly contacting both a drain feature of the first transistor and a drain feature of the second transistor together, wherein the drain contact is longer than each of a first source contact of the first transistor and a second source contact of the second transistor.

A semiconductor device comprising:

• a substrate;
• a first active region and a second active region over the substrate and oriented lengthwise generally along a first direction;
• a gate electrode over the substrate and oriented lengthwise generally along a second direction perpendicular to the first direction, wherein the gate electrode engages the first active region to form a first transistor and engages the second active region to form a second transistor;
• a first source contact oriented lengthwise generally along the second direction, the first source contact directly contacting a source feature of the first transistor;
• a second source contact oriented lengthwise generally along the second direction, the second source contact directly contacting a source feature of the second transistor;
• and
• a drain contact oriented lengthwise generally along the second direction, the drain contact directly contacting both a drain feature of the first transistor and a drain feature of the second transistor together.