ESD protection structure, ESD protection circuit, and chip

An electrostatic discharge protection circuit, comprising at least one electrostatic discharge protection unit;

• wherein the electrostatic discharge protection unit comprises a thyristor, a first diode, and a second diode;
• the thyristor comprises:
• a PNP-type triode, having an emitter forming an anode of the thyristor, a base being connected to a first node, and a collector being connected to a second node;
• and
• an NPN-type triode, having a collector being connected to the first node, a base being connected to the first node and the second node, and an emitter forming a cathode of the thyristor;
• an anode of the first diode is connected to the anode of the thyristor, and a cathode of the first diode is connected to the first node;
• an anode of the second diode is connected to the first node, and a cathode of the second diode is connected to the cathode of the thyristor;
• wherein the anode of the thyristor in the electrostatic discharge protection circuit forms an anode of the electrostatic discharge protection unit, and the cathode of the thyristor in the electrostatic discharge protection circuit forms a cathode of the electrostatic discharge protection unit;
• and
• the electrostatic discharge protection circuit comprises a plurality of electrostatic discharge protection units, the plurality of electrostatic discharge protection units are connected in series;
• and in two adjacent electrostatic discharge protection units, an anode of one electrostatic discharge protection unit is connected to a cathode of the other electrostatic discharge protection unit;
• wherein the electrostatic discharge protection circuit comprises:
• a first signal terminal, a second signal terminal, a third signal terminal, a first electrostatic discharge protection unit group, and a second electrostatic discharge protection unit group;
• wherein
• the first electrostatic discharge protection unit group, comprises:
• a first electrostatic discharge protection unit, having an anode being connected to the first signal terminal;
• and
• a second electrostatic discharge protection unit, having an anode being connected to a cathode of the first electrostatic discharge protection unit, and a cathode being connected to the second signal terminal;
• the second electrostatic discharge protection unit group, comprises:
• a third electrostatic discharge protection unit, having an anode being connected to the first signal terminal;
• and
• a fourth electrostatic discharge protection unit, having an anode being connected to a cathode of the third electrostatic discharge protection unit, and a cathode being connected to the third signal terminal;
• wherein, the first electrostatic discharge protection unit, the second electrostatic discharge protection unit, the third electrostatic discharge protection unit, and the fourth electrostatic discharge protection unit form the plurality of electrostatic discharge protection units.

A chip, comprising an electrostatic discharge protection structure, comprising:

• a semiconductor substrate, comprising a first integrated region;
• a first N-type well, located in the first integrated region;
• a first P-type well, located in the first integrated region, and arranged adjacent to the first N-type well;
• a first N-type doped portion, located in the first N-type well;
• a first P-type doped portion, located in the first N-type well, and located on a side of the first N-type doped portion close to the first P-type well;
• a second N-type doped portion, located in the first P-type well;
• and
• a second P-type doped portion, located in the first P-type well, and located on a side of the second N-type doped portion away from the first N-type well, wherein
• the first N-type doped portion is electrically connected to the second P-type doped portion;
• wherein the chip comprises a power terminal, a ground terminal, and a signal transmission terminal;
• the chip comprises a plurality of electrostatic discharge protection structures;
• when the electrostatic discharge protection structure comprises a first signal terminal, a second signal terminal, and a third signal terminal, the plurality of electrostatic discharge protection structures comprise:
• a first electrostatic discharge protection structure, wherein a first signal terminal of the first electrostatic discharge protection structure is connected to the power terminal, a second signal terminal of the first electrostatic discharge protection structure is connected to the signal transmission terminal, and a third signal terminal of the first electrostatic discharge protection structure is connected to the ground terminal;
• a second electrostatic discharge protection structure, wherein a first signal terminal of the second electrostatic discharge protection structure is connected to the signal transmission terminal, a second signal terminal of the second electrostatic discharge protection structure is connected to the ground terminal, and a third signal terminal of the second electrostatic discharge protection structure is connected to the power terminal;
• and
• a third electrostatic discharge protection structure, wherein a first signal terminal of the third electrostatic discharge protection structure is connected to the ground terminal, a second signal terminal of the third electrostatic discharge protection structure is connected to the signal transmission terminal, and a third signal terminal of the third electrostatic discharge protection structure is connected to the power terminal.