US 12,218,125 B2Granted

Electro-static discharge protection structure and chip

AssigneeChangxin Memory Technologies, Inc.

InventorQian Xu

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Abstract

The present disclosure relates to the technical field of semiconductors, and provides an electro-static discharge (ESD) protection structure and a chip. The ESD protection structure includes: a semiconductor substrate, a first P-type well, a first N-type well, a first N-type doped portion, a first P-type doped portion, a second N-type doped portion, a second P-type doped portion, a third doped well, a third P-type doped portion and a third N-type doped portion, wherein the first P-type well, the first N-type well and the third doped well are located in the semiconductor substrate; the first N-type doped portion and the first P-type doped portion are located in the first N-type well and spaced apart; the second N-type doped portion and the second P-type doped portion are located in the first P-type well and spaced apart.

Claims15

Dependent claims

An electro-static discharge protection structure, comprising:

a semiconductor substrate;
a first P-type well, located in the semiconductor substrate;
a first N-type well, located in the semiconductor substrate;
a first N-type doped portion, located in the first N-type well;
a first P-type doped portion, located in the first N-type well, and spaced apart from the first N-type doped portion;
a second N-type doped portion, located in the first P-type well;
a second P-type doped portion, located in the first P-type well, and spaced apart from the second N-type doped portion;
a third doped well, located in the semiconductor substrate;
a third P-type doped portion, located in the third doped well;
and
a third N-type doped portions, located in the third doped well, and spaced apart from the third P-type doped portion,
wherein the second N-type doped portion, the second P-type doped portion and the third N-type doped portion are electrically connected;
and the first N-type doped portion is electrically connected to the third P-type doped portion.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/658,293Filed 7 Apr 2022
Priority: CN 202110793560.714 Jul 2021
Published: US 2023/0012968 A119 Jan 2023
Granted: 4 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 89/711
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using bipolar transistors as protective elements
H02H 9/046
Adapted to a particular application and not provided for elsewhere: responsive to excess voltage appearing at terminals of integrated circuits
H10D 8/00
Diodes
H10D 89/611
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: using diodes as protective elements

Family

US 2023/0012968 A1Pre-grant publication · published 19 Jan 2023
US 12,218,125 B2This patent

From the US filing history. Foreign family members aren’t listed.

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