Backside contact to improve thermal dissipation away from semiconductor devices

An integrated circuit (IC) die comprising:

• a semiconductor substrate;
• a transistor arranged on a frontside of the semiconductor substrate;
• a first bond feature arranged over the frontside of the semiconductor substrate;
• a second bond feature arranged on a backside of the semiconductor substrate;
• a backside contact arranged within the second bond feature, wherein a bottommost surface of the backside contact is thermally coupled to the backside of the semiconductor substrate, wherein a topmost surface of the backside contact is arranged spaced apart from a bottommost surface of the semiconductor substrate;
• and
• a through substrate via (TSV) extending through the semiconductor substrate and coupled to the second bond feature, wherein a topmost surface of the TSV is above the topmost surface of the backside contact.

A method of forming an integrated circuit, the method comprising:

• forming a semiconductor device on a frontside of a semiconductor substrate;
• depositing a first dielectric layer over a backside of the semiconductor substrate;
• patterning the first dielectric layer to form a first opening in the first dielectric layer, wherein the first opening exposes a surface of the backside of the semiconductor substrate;
• form a backside contact in the first opening;
• depositing a second dielectric layer over the first dielectric layer and the backside contact;
• patterning the second dielectric layer and the first dielectric layer to form a second opening that extends completely through the first dielectric layer, the second dielectric layer, and the semiconductor substrate;
• forming a through substrate via (TSV) in the second opening;
• and
• forming more dielectric layers, bonding vias, and bonding wire layers over the second dielectric layer to form a second bonding structure on the backside of the semiconductor substrate, wherein the backside contact is coupled to the bonding vias and the bonding wire layers.