Back to results
US 12,218,105 B2Granted
Package and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Chen, Hsien-Wei Chen, Ming-Fa Chen
Life of this patent
Estimating the term…
Abstract
Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. A bonding insulating layer of the hybrid bonding structure extends to contact with one interconnect structure of the first die or the second die.
Claims20
A package, comprising:
- a first die and a second die bonded together through a bonding structure,
- wherein the bonding structure comprises a first bonding structure disposed over a front side of the first die, and the first bonding structure comprises a first bonding dielectric layer, and the first bonding dielectric layer has a first protrusion extending from the front side of the first die toward a first interconnect structure of the first die,
- wherein the front side of the first die and a backside of the second die are bonded together by the bonding structure.
A method of forming a package, comprising:
- bonding a first die and a second die together through a bonding structure,
- wherein the bonding structure comprises a first bonding structure disposed over a front side of the first die, and the first bonding structure comprises a first bonding dielectric layer, and the first bonding dielectric layer has a first protrusion extending from the front side of the first die toward a first interconnect structure of the first die.
A package, comprising:
- a first die having a first interconnect structure and a through via below and connected to the first interconnect structure;
- a second die having a second interconnect structure, wherein the second interconnect structure is connected to the first interconnect structure through the through via;
- a first bonding structure disposed over a front side of the first die, and the first bonding structure comprises a first bonding dielectric layer and a first blocking layer on the first bonding dielectric layer, and the first bonding dielectric layer has a first protrusion extending from the front side of the first die to contact a top metal feature of the first interconnect structure of the first die;
- a gap-filling layer aside and laterally encapsulating the first die and the second die;
- a bonding pad through the first bonding dielectric layer to contact with the first interconnect structure of the first die;
- and
- a passivation layer over the front side of the first die and partially covering the bonding pad, the first blocking layer and the gap-filling layer.
4 more elements
Dependencies are inferred from the claim text.