Interposer and semiconductor package including the same

A semiconductor package comprising:

• an interposer including a first connection structure having a first redistribution conductor, a second connection structure having a second redistribution conductor, and a third connection structure disposed between the first connection structure and the second connection structure, the third connection structure having a third redistribution conductor, the first to third connection structures being spaced apart from each other;
• a first semiconductor chip disposed on the first connection structure and the third connection structure;
• a second semiconductor chip disposed on the second connection structure and the third connection structure;
• an encapsulant disposed on the interposer and covering each of the first semiconductor chip and the second semiconductor chip;
• and
• a plurality of electrical connection structures disposed below the interposer, and electrically connected to the first semiconductor chip and the second semiconductor chip,
• wherein the first redistribution conductor electrically connects the first semiconductor chip to at least a portion of the plurality of electrical connection structures,
• the second redistribution conductor electrically connects the second semiconductor chip to at least a portion of the plurality of electrical connection structures,
• the third redistribution conductor electrically connects the first semiconductor chip and the second semiconductor chip to each other
• the interposer further includes a passivation layer filling spaces between the first connection structure, the second connection structure, and the third connection structure, and
• a side surface of the passivation layer is coplanar with a side surface of the encapsulant,
• wherein each of the first connection structure, the second connection structure, and the third connection structure further includes a plurality of insulation layers,
• wherein each of the first redistribution conductor, the second redistribution conductor, and the third redistribution conductor includes a plurality of redistribution layers disposed in or on the plurality of insulation layers, and a plurality of connection vias penetrating each of the plurality of insulation layers and electrically connecting the plurality of redistribution layers to each other,
• wherein the passivation layer and each of the plurality of insulation layers includes a photosensitive insulation layer,
• wherein each of the plurality of insulation layers is a positive-type photosensitive insulation layer, and
• wherein the passivation layer is a negative-type photosensitive insulation layer.

A semiconductor package comprising:

• a printed circuit board;
• an interposer disposed on the printed circuit board, and including a first connection structure having a first redistribution conductor, a second connection structure having a second redistribution conductor, and a third connection structure disposed between the first connection structure and the second connection structure, the third connection structure having a third redistribution conductor;
• a first semiconductor chip disposed on the interposer to overlap the first connection structure and the third connection structure, in a stacking direction of the first semiconductor chip on the interposer;
• a second semiconductor chip disposed on the interposer to overlap the second connection structure and the third connection structure, in a stacking direction of the second semiconductor chip on the interposer;
• and
• an encapsulant disposed on the interposer and covering each of the first semiconductor chip and the second semiconductor chip,
• wherein the first redistribution conductor redistributes the first semiconductor chip,
• the second redistribution conductor redistributes the second semiconductor chip,
• the third redistribution conductor electrically connects the first semiconductor chip and the second semiconductor chip to each other,
• the interposer further includes a passivation layer filling spaces between the first connection structure, the second connection structure, and the third connection structure, and
• a side surface of the passivation layer is coplanar with a side surface of the encapsulant,
• wherein each of the first connection structure, the second connection structure, and the third connection structure further includes a plurality of insulation layers,
• wherein each of the first redistribution conductor, the second redistribution conductor, and the third redistribution conductor includes a plurality of redistribution layers disposed in or on the plurality of insulation layers, and a plurality of connection vias penetrating each of the plurality of insulation layers and electrically connecting the plurality of redistribution layers to each other,
• wherein the passivation layer and each of the plurality of insulation layers includes a photosensitive insulation layer,
• wherein each of the plurality of insulation layers is a positive-type photosensitive insulation layer, and
• wherein the passivation layer is a negative-type photosensitive insulation layer.