Overvoltage protection device with trench contact

An overvoltage protection device, comprising:

• a semiconductor body comprising a substrate region disposed beneath an upper surface of the semiconductor body;
• first and second contact pads disposed over the upper surface of the semiconductor body;
• a trenched connector electrically connected between the first contact pad and the substrate region;
• and
• a unidirectional voltage clamping device formed in the semiconductor body and connected between the second contact pad and the substrate region.

An overvoltage protection device, comprising:

• a semiconductor body comprising a base region and a plurality of semiconductor mesas disposed on an upper surface of the base region;
• first and second contact pads disposed on upper surfaces of separate ones of the semiconductor mesas;
• a plurality of doped regions formed at lower surfaces of the semiconductor mesas, the lower surfaces of the semiconductor mesas facing the base region;
• and
• a plurality of trenched connectors formed in the semiconductor mesas,
• wherein each of the trenched connectors comprise a trench that is formed in an upper surface of the semiconductor mesas and extends to the base region, a metal electrode disposed within the trench, and a doped sidewall region lining sidewalls of the trench,
• wherein the doped regions and the trenched connectors collectively form a first voltage blocking device between the first and second contact pads.