Semiconductor memory device and manufacturing method of the semiconductor memory device

Abstract

There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes: a gate stack structure including a plurality of interlayer insulating layers and a plurality of conductive patterns, which are alternately stacked in a vertical direction; a dummy stack structure including a plurality of dummy interlayer insulating layers and a plurality of sacrificial layers, which are alternately stacked in the vertical direction, the dummy stack structure being disposed at a level at which the gate stack structure is disposed; a channel structure penetrating the gate stack structure; a memory layer disposed between each of the plurality of conductive patterns and the channel structure; and a dummy pillar penetrating a portion of the dummy stack structure with a length less than a length of the channel structure in the vertical direction.

Dependencies are inferred from the claim text.