US 12,218,073 B2 · Semiconductor marks and forming methods thereof

Abstract

The present disclosure relates to a semiconductor mark and a forming method thereof. The semiconductor mark comprises: a previous layer mark comprising first patterns and at least one second pattern, the second pattern being located between adjacent first patterns, the first pattern being different from the second pattern in material property. Since the first pattern and the second pattern in the previous layer mark in the semiconductor mark according to the present disclosure are different in material property, during measurement, the first pattern and the second pattern are different in reflectivity for measurement light. Thus, the contrast of images of the first pattern and the second pattern obtained during measurement is improved, the positions and boundaries of the first pattern and the second pattern are clearly determined, and the measurement of the previous layer mark is more accurate.

Claims13

Dependent claims

A semiconductor mark, comprising:

a previous layer mark, comprising first patterns and second pattern, the second pattern being located between adjacent first patterns, the first pattern being different from the second pattern in material property;
and, wherein
the previous layer mark comprises a previous layer alignment mark on a wafer during exposure by a lithography machine or a previous layer overlay mark on the wafer after exposure;
the material property comprises a refractive index of a material and/or an extinction coefficient of the material;
the first pattern comprises a plurality of first sub-patterns and a plurality of second sub-patterns, and the first sub-patterns and the second sub-patterns are different in material property;
and
a dimension of the first sub-patterns is ⅓ to ¾ of a dimension of the second sub-patterns.

4 more elements

A method for forming a semiconductor mark, comprising:

providing a substrate;
and
forming a previous layer mark on the substrate, the previous layer mark comprising first patterns and second pattern, the second pattern being located between adjacent first patterns, the first pattern being different from the second pattern in material property;
and, wherein
the previous layer mark comprises a previous layer alignment mark on a wafer during exposure by a lithography machine or a previous layer overlay mark on the wafer after exposure;
the material property comprises a refractive index of a material and/or an extinction coefficient of the material;
and
forming the first patterns comprises:
forming a first material layer on the substrate;
etching the first material layer, forming a plurality of first recesses and a plurality of protrusions among the first recesses, the protrusions forming first sub-patterns;
filling a second material layer in the first recesses and forming second sub-patterns;
and
forming the first patterns by the first sub-patterns and the second sub-patterns, wherein a dimension of the first sub-patterns is ⅓ to ¾ of a dimension of the second sub-patterns.

10 more elements

Dependencies are inferred from the claim text.

Semiconductor marks and forming methods thereof

Life of this patent

Semiconductor marks and forming methods thereof

Life of this patent

Abstract

Claims13