Through-wafer coaxial transition

An electronic assembly, comprising:

• a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface;
• said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface;
• and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface;
• wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity, wherein the insulator is thicker than the carrier wafer, the top surface of the insulator and the carrier wafer being flush and the bottom surface of the insulator protruding out of the bottom surface of the carrier wafer, and wherein said attachment metal further covers at least a portion of the bottom surface of the carrier wafer around the through-wafer cavity.

An electronic assembly, comprising:

• a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface;
• said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface;
• and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface;
• wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity, the electronic assembly further comprising a component chip having a top surface and a bottom surface joined by chip side surfaces, said component chip being held in a second through-wafer cavity by direct contact of said chip side surface with a second attachment metal filling said second through-wafer cavity.