Integrated circuit with backside interconnections and method of making same

A transmission gate of an integrated circuit, comprising:

• a first P-type transistor and a second P-type transistor in an active layer;
• a first N-type transistor and a second N-type transistor in the active layer;
• a top interconnect on a first side of the active layer;
• and
• a backside interconnect on a second side of the active layer opposite from the first side of the active layer, wherein
• the top interconnect electrically connects a gate electrode of the first P-type transistor to a gate electrode of the second N-type transistor,
• the backside interconnect continuously electrically connects a gate electrode of the second P type transistor to a gate electrode of the first N-type transistor;
• a first backside contact electrically connected to the backside interconnect and the gate electrode of the second P-type transistor;
• and
• a second backside contact electrically connected to the backside interconnect and the gate electrode of the first N-type transistor, wherein a first distance from the gate electrode of second P-type transistor to a distal end of the first backside contact from the gate electrode of the second P-type transistor is greater than a second distance from the gate electrode of the second P-type transistor to a distal end of the backside interconnect from the gate electrode of the first N-type transistor.

A device, comprising:

• a first transistor having a first drain region in a substrate and a first gate electrode;
• a second transistor having a second drain region, the first transistor and the second transistor being in an active layer of an integrated circuit;
• a first interconnect structure on a backside of the active layer, wherein the first interconnect structure comprises:
• a first backside contact electrically connected to the first drain region,
• a second backside contact electrically connected to the second drain region, and
• a first backside interconnect directly connected to a sidewall of the first backside contact, wherein a first distance from the first drain region to a distal end of the first backside contact from the first drain region is greater than a second distance from the first drain region to a distal end of the backside interconnect from the second drain region;
• and
• a second interconnect structure on the backside of the active layer, wherein the second interconnect structure comprises:
• a third backside contact electrically connected to the first gate electrode;
• and
• a third interconnect structure on a frontside of the active layer, wherein the third interconnect structure comprises:
• a first frontside contact extending through the substrate, wherein the first frontside contact electrically connects the third interconnect structure to the second gate electrode.