Method of manufacturing a semiconductor device including a plurality of circuit components and array of conductive contacts

A method of manufacturing a semiconductor device, the method comprising:

• forming a first integrated circuit component over a first wafer, the first integrated circuit component having a top surface, the top surface comprising a plurality of arrays of conductive connectors, wherein each conductive connector within the top surface is located within a first array, a second array, a third array, or a fourth array, wherein each of the first array, the second array, the third array, and the fourth array are located along a perimeter of the first integrated circuit component and wherein each of the first array, the second array, the third array, and the fourth array extend in directions perpendicular to adjacent arrays on the first integrated circuit component;
• forming a second integrated circuit component over the first wafer and separated from the first integrated circuit component by a scribe region, the second integrated circuit component having a second top surface, the second top surface comprising a second plurality of arrays of conductive connectors, wherein each conductive connector within the second top surface is located within a fifth array, a sixth array, a seventh array, or an eighth array, wherein each of the fifth array, the sixth array, the seventh array, and the eighth array are located along a perimeter of the second integrated circuit component and wherein each of the fifth array, the sixth array, the seventh array, and the eighth array extend in directions perpendicular to adjacent arrays on the second integrated circuit component;
• bonding the first integrated circuit component and the second integrated circuit component to connectors on a second wafer, the bonding utilizing a bonding wave to expel gases along a path between the first array, the second array, the third array, and the fourth array;
• and
• dicing the first integrated circuit component and the second integrated circuit component.

A method of manufacturing a semiconductor device, the method comprising:

• receiving a first wafer, the first wafer comprising a plurality of integrated circuit components separated by scribe regions, wherein each one of the plurality of integrated circuit components has a same pattern of conductive connectors, wherein a first integrated circuit component within the plurality of integrated circuit components comprises:
• a first array of conductive connectors extending in a first direction;
• a second array of conductive connectors extending in a second direction perpendicular to the first direction;
• a third array of conductive connectors extending in the first direction and located on an opposite side of the first integrated circuit component from the first array;
• and
• a fourth array of conductive connectors extending in the second direction and located on an opposite side of the first integrated circuit component from the second array;
• bonding the first array of conductive connectors to a fifth array of conductive connectors on a second wafer;
• and
• scribing the first integrated circuit component from a remainder of the first wafer to form a singulated semiconductor device.