Manufacturing method for semiconductor device

A method of making semiconductor structure, comprising:

• forming a first conductive line over a substrate, wherein the first conductive line extends along a first direction;
• depositing a protection layer along a sidewall of the first conductive line;
• forming a second conductive line, wherein the second conductive line extends along the first direction, and a first distance between the first conductive line and the substrate is different from a second distance between the second conductive line and the substrate;
• and
• forming a via extending from the second conductive line, wherein the via extends along a second direction perpendicular to the first direction, and the via directly contacts a sidewall of the protection layer.

A method for forming a semiconductor structure, comprising:

• depositing a first insulation material over a transistor;
• etching the first insulation material to define a plurality of first recesses extending along a first direction at a first level of the first insulation material;
• depositing a second insulation material lining with a sidewall of each of the plurality of first recesses;
• depositing a first metal in each of the plurality of first recesses lined with the second insulating material to define a plurality of first metal lines;
• etching the first insulation material to define a first via recess extending along a second direction perpendicular to the first direction;
• and
• filling the first via recess with a conductive material to define a first via, wherein the first via directly contacts the second insulating material of at least one of the plurality of first metal lines.