Semiconductor device

A semiconductor device comprising:

• a semiconductor chip having a first surface on which a protruding electrode is disposed;
• and
• a wiring substrate having a second surface facing the first surface of the semiconductor chip,
• wherein the wiring substrate includes:
• a first insulating layer;
• a first metal pattern formed on the first insulating layer;
• a second insulating layer contacted with the first metal pattern, and formed on the first insulating layer so as to cover the first metal pattern;
• a second metal pattern having a first portion facing the protruding electrode and a second portion located around the first portion, and formed on the second insulating layer;
• an organic insulating film contacted with the second portion of the second metal pattern, and formed on the second insulating layer so as to expose the first portion of the second metal pattern;
• a third insulating layer;
• and
• a third metal pattern formed on the third insulating and to which a reference potential is to be supplied,
• wherein the first metal pattern has:
• a first lower surface contacted with the first insulating layer;
• and
• a first upper surface opposite the first lower surface, and contacted with the second insulating layer,
• wherein the second metal pattern has:
• a second lower surface contacted with the second insulating layer;
• and
• a second upper surface contacted with the organic insulating film at the second portion,
• wherein the third metal pattern has:
• a third lower surface contacted with the third insulating layer;
• and
• a third upper surface opposite the third lower surface, and contacted with the first insulating layer,
• wherein a surface roughness of the second upper surface of the second metal pattern is larger than a surface roughness of each of the second lower surface of the second metal pattern and the first upper surface of the first metal pattern, and
• wherein a surface roughness of the third upper surface of the third metal pattern is larger than the surface roughness of each of the second lower surface of the second metal pattern and the first upper surface of the first metal pattern.