Interposer, semiconductor package including the same, and method of fabricating the interposer

A semiconductor package comprising:

• a package substrate having a recess portion;
• an interposer in the recess portion;
• on the package substrate;
• and
• a first semiconductor device and a second semiconductor device that are arranged to at least partially overlap the interposer,
• wherein the interposer comprises:
• an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface;
• a first through-electrode structure and a second through-electrode structure, each passing through the interposer substrate and protruding from the first main surface;
• a first passivation layer on the first main surface of the interposer substrate, the first passivation layer includes a first material;
• a second passivation layer on the first passivation layer between the first through-electrode structure and the second through-electrode structure, the second passivation layer includes a second material that is different from the first material;
• and
• a connection terminal structure on the first main surface of the interposer substrate, and wherein the connection terminal structure contacts the first passivation layer, the second passivation layer, the first through-electrode structure, and the second through-electrode structure.

A semiconductor package comprising:

• a package substrate having a recess portion;
• an interposer disposed on the package substrate and having a first surface and a second surface opposite to the first surface;
• a first semiconductor device on the first surface of the interposer, the first semiconductor device is accommodated in the recess portion;
• and
• a second semiconductor device on the second surface of the interposer,
• wherein the interposer comprises:
• an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface;
• a first through-electrode structure and a second through-electrode structure, each passing through the interposer substrate and protruding from the first main surface;
• a first passivation layer on the first main surface of the interposer substrate, the first passivation layer includes a first material;
• a second passivation layer on the first passivation layer between the first through-electrode structure and the second through-electrode structure, the second passivation layer includes a second material that is different from the first material;
• and
• a connection terminal structure on the first main surface of the interposer substrate, and wherein the connection terminal structure electrically connects the interposer to each of the first semiconductor device and the package substrate.