Nested interposer with through-silicon via bridge die

An electronic system, comprising:

• a board;
• an interposer electrically coupled to the board, wherein the interposer comprises a cavity that passes into but not through an interposer substrate, a nested component in the cavity, a through interposer via (TIV) within the interposer substrate and coupled to a first backside pad, and a core via beneath the nested component, the core via extending from the nested component through the interposer substrate to a second backside pad, the second backside pad laterally spaced apart from the first backside pad, and the second backside pad separate and distinct from the first backside pad;
• a first die electrically coupled to the interposer and the nested component by a first plurality of interconnects;
• and
• a second die electrically coupled to the interposer and the nested component by a second plurality of interconnects.

An electronic package, comprising:

• an interposer, wherein the interposer comprises:
• a glass substrate;
• a cavity that passes into but not through the glass substrate;
• a through glass via (TGV) within the glass substrate;
• an interposer pad electrically coupled to the TGV;
• and
• a first backside pad coupled to the TIV;
• a silicon bridge die in the cavity, wherein the silicon bridge die comprises a silicon bridge die pad coupled to a through-silicon via;
• a core via beneath the silicon bridge die, the core via extending from the silicon bridge die through the glass substrate to a second backside pad, the second backside pad laterally spaced apart from the first backside pad, and the second backside pad separate and distinct from the first backside pad;
• and
• a die coupled to the interposer pad by a first interconnect and coupled to the silicon bridge die pad by a second interconnect.