Semiconductor apparatus and manufacturing method thereof, and three-dimensional integrated circuit

A three-dimensional integrated circuit comprising a semiconductor apparatus, wherein the semiconductor apparatus comprises:

• a substrate, provided with a groove on the substrate;
• and
• a TSV structure, disposed on the substrate, a first end of the TSV structure being exposed in the groove, and a distance between an end surface of the first end and a bottom wall of the groove being smaller than a depth of the groove;
• wherein the substrate comprises:
• a base substrate, provided with a first groove on the base substrate, the first end being exposed in the first groove;
• and
• a first insulation layer, disposed on the base substrate, a first blind hole concentric with the first groove being provided on the first insulation layer, and the first blind hole making at least a portion of the first end of the TSV structure exposed to the base substrate exposed to the first insulation layer:
• wherein the semiconductor apparatus further comprises:
• a heat conductive layer group, disposed in the first blind hole, the heat conductive layer group being at least in contact with an end surface of the first end of the TSV structure, and a thickness of the heat conductive layer group decreasing with an increase of a distance from the end surface of the first end;
• and
• a heat dissipation layer group, connected to the heat conductive layer group, and extending towards a side distal from the TSV structure.