Semiconductor encapsulant strength enhancer

A semiconductor device, comprising:

• an encapsulant body of electrically insulating encapsulant material;
• a semiconductor die encapsulated within the encapsulant body;
• and
• a reinforcing structure contained within the encapsulant body and arranged between the semiconductor die and an outer surface of the encapsulant body,
• wherein the reinforcing structure comprises a textured surface area that is accessible by fluid,
• wherein the reinforcing structure is embedded within the encapsulant body such that the textured surface adheres to the encapsulant material, and
• wherein the reinforcing structure has a tensile strength that is greater than a tensile strength of the curable encapsulant, and
• wherein the reinforcing structure comprises a material with a coefficient of thermal expansion that is equal to or less than a coefficient of thermal expansion of the encapsulant.

A method of producing a semiconductor module, the method comprising:

• providing a power electronics carrier comprising a structured metallization layer disposed on an electrically insulating substrate;
• mounting a power semiconductor die on the power electronics carrier;
• providing a housing comprising sidewalls that surround an interior volume over the power electronics carrier;
• providing a reinforcing structure within the interior volume that comprises a textured surface area;
• and
• providing a curable encapsulant disposed within the interior volume that encapsulates the power semiconductor die,
• wherein the reinforcing structure is embedded within volume of curable encapsulant such that the textured surface area adheres to the encapsulant, and
• wherein the reinforcing structure has a tensile strength that is greater than a tensile strength of the curable encapsulant,
• wherein the reinforcing structure comprises a material with a coefficient of thermal expansion that is equal to or less than a coefficient of thermal expansion of the encapsulant.