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US 12,218,015 B2Granted
Interferometer systems and methods for real time etch process compensation control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChansyun Yang, Chan-Lon Yang, Keh-Jeng Chang, Perng-Fei Yuh
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Abstract
An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result.
Claims20
An apparatus comprising:
- a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, wherein the beam conditioning assembly comprises:
- an orthogonal frequency division multiplex (OFDM) device configured to provide a plurality of beams each having a different wavelength;
- a beam selector configured to select the one or more wavelengths;
- and
- a multiple input multiple output (MIMO) device comprising a plurality of antenna elements configured to direct the selected one or more wavelengths as a beam to scan a surface of the substrate and receive the one or more reflected wavelengths;
- a device configured to process the one or more reflected wavelengths to predict, using a machine learning model, a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result;
- and
- a laser device configured to direct a laser beam to a region of the substrate and change a lithophotographic condition of the region of the substrate in response to the comparison result.
5 more elements
A system comprising:
- a process chamber for forming one or more layers on a substrate, wherein the process chamber comprises:
- a beam conditioning assembly configured to output one or more wavelengths;
- an off-axis parabolic mirror configured to direct the one or more wavelengths to a region of the substrate and receive one or more reflected wavelengths from the region of the substrate;
- a platform configured to support the substrate, the platform comprising a plurality of independently controllable temperature zones;
- and
- a laser device;
- and
- a device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a predetermined process variable to obtain a comparison result, wherein the laser device is configured to direct a laser beam to the region of the substrate and change a temperature of the region of the substrate in response to the comparison result.
5 more elements
A semiconductor processing system comprising:
- a process chamber configured to perform at least one process on a substrate, wherein the process chamber comprises:
- a beam conditioning assembly configured to output one or more wavelengths;
- an off-axis parabolic mirror configured to direct the one or more wavelengths to a region of the substrate and receive one or more reflected wavelengths from the region of the substrate;
- a platform configured to support the substrate, the platform comprising a plurality of independently controllable temperature zones;
- and
- a laser device configured to direct a laser beam to the region of the substrate and change a temperature of the region of the substrate;
- and
- a device configured to process the one or more reflected wavelengths to predict, using a machine learning model, a process variable and compare the predicted process variable with a predetermined process variable to obtain a comparison result, wherein the temperature of the region is changed by the laser device in response to the comparison result.
5 more elements
Dependencies are inferred from the claim text.