Method of making 3D segmented devices for enhanced 3D circuit density
AssigneeTokyo Electron Limited
InventorsMark Gardner, H. Jim Fulford
Life of this patent
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Abstract
A method of microfabrication includes forming an initial vertical channel structure of semiconductor material protruding from a surface of a substrate such that the initial vertical channel structure has a current flow path that is perpendicular to the surface of the substrate. The initial vertical channel structure is segmented lengthwise into a plurality of independent vertical channel structure segments, each vertical channel structure segment having a respective current flow path that is perpendicular to the surface of the substrate.
Claims20
A method of microfabrication, the method comprising:
- forming a layer stack on a substrate, the layer stack including alternating layers of a metal and a first dielectric material;
- forming openings in the layer stack that extend vertically through the layer stack and uncover an underlying layer of semiconductor material;
- forming vertical channel structures extending through the openings of the layer stack, the vertical channel structures formed by epitaxial growth, the vertical channel structures each having a current flow path that is perpendicular to a surface of the substrate;
- segmenting each of the vertical channel structures lengthwise into a plurality of vertical channel structure segments, each vertical channel structure segment having a current flow path that is perpendicular to the surface of the substrate;
- and
- using portions of the layers of the metal to electrically connect to the vertical channel structure segments.
A method of microfabrication, the method comprising:
- forming an initial vertical channel structure of semiconductor material protruding from a surface of a substrate such that the initial vertical channel structure has a current flow path that is perpendicular to the surface of the substrate;
- and
- segmenting the initial vertical channel structure lengthwise into a plurality of independent vertical channel structure segments, each vertical channel structure segment having a respective current flow path that is perpendicular to the surface of the substrate.
Dependencies are inferred from the claim text.