Semiconductor package and methods of forming the same

A method of forming a semiconductor device, the method comprising:

• depositing a first dielectric material over a passivation layer of a die and over a die connector of the die, the die connector extending through the passivation layer, wherein the first dielectric material has a first shrinkage ratio;
• curing the first dielectric material;
• after curing the first dielectric material, depositing a second dielectric material over the first dielectric material, wherein the second dielectric material has a second shrinkage ratio different from the first shrinkage ratio;
• and
• curing the second dielectric material.

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric material over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric material having a first shrinkage ratio smaller than a pre-determined shrinkage ratio;
• curing the first dielectric material, wherein after curing the first dielectric material, a first vertical distance between a highest point of an upper surface of the first dielectric material and a lowest point of the upper surface of the first dielectric material is smaller than a pre-determined distance value;
• and
• dicing the wafer to separate the plurality of dies into individual dies.