System, device and methods of manufacture

A method comprising:

• forming a first die at least partially within a semiconductor substrate;
• forming a second die at least partially within the semiconductor substrate;
• forming a third die at least partially within the semiconductor substrate, the second die being between the first die and the third die;
• forming a first set of metallization layers in direct physical contact with the first die and the second die, wherein the first die and the second die are electrically connected through the first set of metallization layers;
• forming a second set of metallization layers on the first set of metallization layers opposite the first die and the second die, wherein the second set of metallization layers and the first set of metallization layers electrically connect the third die and the first die, wherein the first set of metallization layers is between the semiconductor substrate and the second set of metallization layers;
• and
• forming a backside redistribution structure on the semiconductor substrate opposite the first set of metallization layers.

A method comprising:

• forming a first semiconductor die of a first type at least partially within a substrate;
• forming a second semiconductor die of a second type at least partially within the substrate, the second type being different from the first type;
• forming a third semiconductor die of a third type at least partially within the substrate, the third type being different from the second type;
• forming a local interconnect over the first semiconductor die and the second semiconductor die, wherein the local interconnect is in direct physical contact with the first semiconductor die and the second semiconductor die;
• forming a semi-global interconnect over the local interconnect, wherein the local interconnect is between the semi-global interconnect and the substrate;
• and
• fastening a thermal module to the substrate with a screw assembly.