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US 12,218,000 B2Granted
Semiconductor processing method
AssigneeASM IP Holding B.V.
InventorHeeSung Kang
Life of this patent
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Abstract
A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.
Claims16
A substrate processing method comprising:
- forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion;
- forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage;
- forming an air gap between the first protrusion and the second protrusion by repeating the forming of the second insulating layer;
- removing a by-product remaining between the first protrusion and the second protrusion,
- wherein the by-product is removed while repeating the forming of the second insulating layer, and
- wherein the by-product comprises at least one of a source gas, a molecule detached from or dangling-bonded to a molecule layer formed on an inner surface of the gap between the first and second protrusions, molecular fragments comprising the source gas, or a reaction gas.
3 more elements
Dependencies are inferred from the claim text.