Back to results
US 12,217,970 B2Granted
Plasma etching method using perfluoropropyl carbinol
AssigneeAjou University Industry-Academic Cooperation Foundation
InventorsChang-Koo Kim, Jun-Hyun Kim
Life of this patent
Estimating the term…
Abstract
Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
Claims11
A plasma etching method comprising:
- a first step of vaporizing liquid perfluoropropyl carbinol (PPC);
- a second step of supplying a discharge gas containing the vaporized perfluoropropyl carbinol (PPC) and argon gas to a plasma chamber in which an etching target is disposed;
- and
- a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.
1 more element
Dependencies are inferred from the claim text.