Indium phosphide substrate

An indium phosphide substrate,

• wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and
• wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm,
• a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
• the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

An indium phosphide substrate,

• wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
• wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm;
• and
• wherein the indium phosphide substrate has a diameter of 50.8 mm or less,
• a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 μm,
• the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

An indium phosphide substrate,

• wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
• wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm;
• and
• wherein the indium phosphide substrate has a diameter of 76.2 mm or less,
• a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
• the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

An indium phosphide substrate,

• wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
• wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm;
• and
• wherein the indium phosphide substrate has a diameter of 100 mm or less,
• a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
• the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.