Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant

A method of depositing a metal, comprising:

• providing a structure into a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• and
• the growth-suppressant gas is not flown into the process chamber during a first set of the unit process cycles, and the growth-suppressant gas is flown into the process chamber during a second set of the unit process cycles.

A method of depositing a metal, comprising:

• providing a structure a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• during the tungsten deposition step, initiation of flow the growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber;
• and
• each molecule of the growth-suppressant gas comprises a growth-suppressing element selected from at least one of N or Cl, and atoms of the growth-suppressing element combine with tungsten on a growth surface to inhibit adhesion of fluorine atoms to the tungsten and to reduce growth rate of the tungsten on the growth surface.

A method of depositing a metal, comprising:

• providing a structure a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• during the tungsten deposition step, initiation of flow the growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber;
• and
• wherein the step of depositing the metal comprises:
• depositing a tungsten nucleation portion by providing at least one of silane or diborane into the process chamber together with or after providing the tungsten hexafluoride into the process chamber;
• and
• depositing a tungsten bulk fill portion on the tungsten nucleation portion by providing the tungsten hexafluoride into the process chamber without providing the at least one of silane or diborane into the process chamber together with or after depositing the tungsten bulk portion.

A method of depositing a metal, comprising:

• providing a structure a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• during the tungsten deposition step, initiation of flow the growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber;
• the structure comprises a memory device comprising a stack of insulating layers that are vertically spaced from each other by cavities, and memory opening fill structures that each comprise a memory film and a vertical semiconductor channel, and that vertically extend through each of the insulating layers within the stack of insulating layers;
• and
• the metal is deposited into the cavities to form word lines.

A method of depositing a metal, comprising:

• providing a structure a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• during the tungsten deposition step, initiation of flow the growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber;
• the structure comprises a memory device comprising memory opening fill structures that each comprise a memory film and a vertical semiconductor channel, and two stacks of insulating layers and electrically conductive layers that are laterally spaced apart by a line trench;
• and
• the metal is deposited into the line trench.

A method of depositing a metal, comprising:

• providing a structure a process chamber;
• and
• providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure;
• wherein:
• the metal comprises tungsten;
• the metal fluoride gas comprises tungsten hexafluoride;
• the growth-suppressant gas comprises at least one of a nitrogen containing gas or a gas containing a halogen other than fluorine;
• the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step;
• during the tungsten deposition step, initiation of flow the growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber;
• the structure comprises a transistor and at least one dielectric material portion containing a cavity located over the transistor;
• and
• the metal is deposited into the cavity.