Hard mask trimming in method for manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chien Kuang, Tze-Chung Lin, Li-Te Lin
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Abstract
A method for manufacturing a semiconductor device includes: forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure; and laterally trimming the hard mask portion by a lateral etching process. The lateral etching process includes a radical etching process and a chemical etching process. Alternatively, the lateral etching process includes a radical etching process, a plasma etching process, or a combination thereof, and a cleaning process.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure;
- and
- laterally trimming the hard mask portion by a lateral etching process which includes a radical etching process and a chemical etching process.
A method for manufacturing a semiconductor device, comprising:
- forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure;
- and
- laterally trimming the hard mask portion by a lateral etching process which includes a radical etching process, a plasma etching process, or a combination thereof, and a cleaning process.
A method for manufacturing a semiconductor device, comprising:
- forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure;
- and
- laterally trimming the hard mask portion by a lateral etching process, such that the hard mask portion trimmed by the lateral etching process has a lateral etch amount ranging from 2 nm to 7 nm.
Dependencies are inferred from the claim text.