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US 12,217,958 B2Granted
Method of pre-treating substrate and method of directly forming graphene using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKeunwook Shin, Janghee Lee, Seunggeol Nam, Hyeonjin Shin, Hyunseok Lim, Alum Jung, Kyung-Eun Byun, Jeonil Lee, Yeonchoo Cho
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Abstract
A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.
Claims31
A method of pre-treating a substrate on which graphene is to be directly formed, the method comprising:
- pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen,
- wherein, in an initial period of the pre-treating the substrate, the carbon source and the hydrogen are simultaneously supplied to a chamber in which the substrate is disposed,
- wherein the pre-treating the substrate is performed in the chamber, and
- wherein a graphene seed is present on the substrate immediately after the pre-treating the substrate as a result of the pre-treating and a graphene layer is not present on the substrate immediately after the pre-treating the substrate.
1 more element
Dependencies are inferred from the claim text.